Using a rapid thermal process for manufacturing a wafer bonded s

Details Using a rapid thermal process for manufacturing a wafer bonded s Using a rapid thermal process for manufacturing a wafer bonded s

1987-04-24

1988-09-13

Roy, Upendra

Fishing, trapping, and vermin destroying

437 21, 437111, 437939, 437942, H01L 2120, H01L 2176

Patent

active

047710160

ABSTRACT:
A method of forming a high quality silicon on insulator semiconductor device using wafer bonding. The annealing time for the wafer bonding process is substantially reduced through the use of a rapid thermal annealer, thereby resulting in minimizing the redistribution of the doping concentration resulting from the annealing process.

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Dutartre et al., Jour. Appl. Phys., 59 (1986) 632
Ohasi, et al., Improved Dielectrically Isolated Device Integration by Silicon-wafer Direct Bonding (SDB) Technique, IDEM 1986, vol. 9.1, pp. 210-213.
Lasky, et al., Silicon-On, Insulator (SOI) by Bonding and Etch-Back, IDEM 1985, vol. 28.4, pp. 684-687.
IBM Corp., Methods of Producing Single-Crystal Silicon on Silicon Dioxide, IBM Technical Disclosure Bulletin, 1985, vol. 28, No. 5, pp. 1855-1856.
SOI by Wafer Bonding with Spin-On Glass as Adhesive, Electronics Letters, 1987, vol. 23, No. 1, pp. 39-40.
Dharmadhikari, et al., Optimization of a Rapid Thermal Reflow Process of PSG Using Statistical Methods, Harris Semiconductor.

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