P-I-N photodiodes with transparent conductive contacts

Details P-I-N photodiodes with transparent conductive contacts P-I-N photodiodes with transparent conductive contacts

1992-03-02

1993-05-18

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

257458, 257449, 257448, 257457, 136256, H01L 2714

Patent

active

052123952

ABSTRACT:
This invention pertains to a p-i-n In.sub.0.53 Ga.sub.0.47 As photodiode having an optically transparent composite top electrode consisting of a thin semitransparent metal layer from 10 to 40 nm thick and a transparent cadmium tin oxide (CTO) layer from 90 to 600 nm thick. The metal layer makes a non-alloyed ohmic contact to the semiconductor surface, acts as a barrier between the semiconductor and the CTO preventing oxidation of the semiconductor from the O.sub.2 in the plasma during reactive magnetron sputtering of the CTO layer, and prevents formation of a p-n junction between the semiconductor and CTO. The CTO functions as the n or p contact, an optical window and an anti-reflection coating. The top electrode also avoids shadowing of the active layer by the top electrode, thus allowing greater collection of incident light. Since the top electrode is non-alloyed, inter-diffusion into the i-region is not relevant, which avoids an increased dark current.

REFERENCES:
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patent: 5078803 (1992-01-01), Pier et al.
Zirngibl et al., "Characterization of a Top-Illuminated P-I-N Diode with an Indium Tin Oxide Contact", Appl. Phys. Lett. 54(21), 22 May '89, 2076-2078.
Golan et al., "Novel Indium Oxide/N-GaAs Diodes", Appl. Phys. Lett. 57(21), Nov. 19, 1990, pp. 2205-2207.
Lewin et al., "Transparent Conducting Oxides of Metals and Alloys Made by Reactive Magnetron Sputtering from Elemental Targets", Vacuum, vol. 36, No's 1-3, 1986, pp. 95-98.

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