Avalanche transit time diode with heterojunction structure

Details Avalanche transit time diode with heterojunction structure Avalanche transit time diode with heterojunction structure

1978-01-24

1979-11-27

Larkins, William D.

Oscillators

Relaxation oscillators

331107R, 357 13, H01L 29267, H01L 2990, H03B 912

Patent

active

041763661

ABSTRACT:
An avalanche diode of the IMPact Avalanche Transit Time (IMPATT) type with heterojunction structure of two different semiconductor materials, wherein a semiconductor junction P/N or N/P is located at the interface of the two materials. In order to improve the efficiency of the diode functioning as an oscillator, the impurity concentrations of the semiconductors are chosen so that the avalanche zone is located in one and only one of the materials, the thickness of the materials being determined in conjunction with the impurity concentrations to have transit zones of equal length, thus producing a "double drift" avalanche zone. In the case of Ge/Ga As the condition to be fulfilled by the impurity concentration K.sub.1 of Ge and the impurity concentration K.sub.2 of Ga AS is very simple:

REFERENCES:
patent: 3466512 (1969-09-01), Seidel
patent: 4119994 (1978-10-01), Jain et al.

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