Metal treatment – Compositions – Heat treating
Patent
1978-06-14
1979-11-27
Rutledge, L. Dewayne
Metal treatment
Compositions
Heat treating
148187, 357 34, 357 91, H01L 2122, H01L 2126, H01L 2972
Patent
active
041759834
ABSTRACT:
A process is disclosed for producing a high frequency transistor having a small emitter width. The high frequency transistor has a base zone consisting of an inactive region and of an active region. The lateral extension of the active region is determined by a "beak-shaped" portion of the insulation oxide. In order to permit the least possible number of process steps, the ion implanted base zone is not produced until the emitter window is opened. The invention is particularly suited for the production of integrated circuits.
REFERENCES:
patent: 3904450 (1975-09-01), Evans et al.
patent: 3933540 (1976-01-01), Kondo et al.
patent: 3996077 (1976-12-01), Corneus et al.
patent: 4008107 (1977-02-01), Hayasaka et al.
patent: 4066473 (1976-01-01), O'Brien
Evans et al., ". . . Ion Implanted Bipolar Transistors . . .", 1973 IEEE Int. Solid State Circuits, Conf., Phila., Pa. 174.
Graul et al., "Bipolar . . . Double Implanted Transistors", IEEE J. Solid St. Circuits, SC-10, 1975, 201.
Hung et al., "Double Ion-Implanted Bipolar . . ." IBM-TDB, 17 (1974), 1536.
Payne et al., ". . . Ion Implanted Bipolar . . .", IEEE, vol. ED-21, 1974, 272.
Roy Upendra
Rutledge L. Dewayne
Siemens Aktiengesellschaft
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