Fishing – trapping – and vermin destroying
Patent
1996-05-14
1997-12-02
Quach, T. N.
Fishing, trapping, and vermin destroying
437192, 437195, 437228, H01L 21283
Patent
active
056935617
ABSTRACT:
Integrated circuit fabrication includes the formation of tungsten contacts in windows. Between the tungsten and the contact region are Ti and TiN layers. Defects are prevented or reduced by sealing grain boundaries in the TiN layer prior to tungsten deposition. Grain boundaries are sealed by rinsing the TiN layer in water at ambient temperature or above.
REFERENCES:
patent: 5143861 (1992-09-01), Turner
patent: 5164330 (1992-11-01), Davis et al.
patent: 5175126 (1992-12-01), Ho et al.
patent: 5183782 (1993-02-01), Onishi et al.
patent: 5200360 (1993-04-01), Bradbury et al.
patent: 5202579 (1993-04-01), Fujii
patent: 5232871 (1993-08-01), Ho
patent: 5232873 (1993-08-01), Geva
patent: 5233223 (1993-08-01), Murayama
patent: 5236869 (1993-08-01), Takagi et al.
patent: 5244534 (1993-09-01), Yu et al.
patent: 5260232 (1993-11-01), Muroyama et al.
patent: 5312775 (1994-05-01), Fujii et al.
patent: 5327011 (1994-07-01), Iwamatsu
patent: 5552339 (1996-09-01), Hsieh
"Failure of Titanium Nitride Diffusion Barriers During Tungsten Chemical Vapor Deposition: Theory and Practice", Matthew Rutten et al., Conference Proceedings ULSI-VII, 1992 Materials Research Society.
Merchant Sailesh Mansinh
Olmer Leonard Jay
Schutz Ronald Joseph
Lucent Technologies - Inc.
Quach T. N.
Rehberg John T.
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