Method of making an antifuse metal post structure

Details Method of making an antifuse metal post structure Method of making an antifuse metal post structure

1995-12-29

1997-12-02

Bowens, Jr, Charles L.

Fishing, trapping, and vermin destroying

437195, 437DIG922, 257 50, 257530, H01L 2170

Patent

active

056935560

ABSTRACT:
A method of forming an antifuse device. According to the preferred method of the present invention, a first metal layer comprising a first bulk conductive layer and the top capping layer is formed. Next, the capping layer is etched into a first patterned capping layer. An antifuse layer is then formed over the patterned capping layer and over the first bulk conductive layer. Next, a second metal layer comprising a bottom barrier layer and a second bulk conductive layer is formed on the antifuse layer. The second metal layer and the antifuse layer are then etched to form a metal post on the capping layer. The first bulk conductive layer is then etched in alignment with the patterned capping layer to form a first metal interconnect.

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patent: 5100827 (1992-03-01), Lytle
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patent: 5403778 (1995-04-01), Kwok et al.
patent: 5427979 (1995-06-01), Chang
patent: 5436199 (1995-07-01), Brighton

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