Fishing – trapping – and vermin destroying
Patent
1996-04-29
1997-12-02
Tsai, Jey
Fishing, trapping, and vermin destroying
439 45, 439 52, 439203, 439915, H01L 218246
Patent
active
056935528
ABSTRACT:
A ROM device with a 3-dimensional memory cell structure that allows a high packing density of memory cells in the ROM device. The ROM device includes a silicon substrate having a plurality of parallel trenches formed thereon. These trenches define mesa regions therebetween. Source/drain regions are then formed on the trenches and the mesa regions. Sidewall spacers are formed on lateral sides of selected trenches. A gate oxide layer is then formed over the silicon substrate. Gate layers are then formed on the gate oxide layers along a direction perpendicular to the trenches. These gate layers serve as word lines. The bit lines over the trenches and the mesa regions utilize channel areas between each neighboring pair of source/drain regions in the horizontal direction to define a plurality of horizontal memory cells at intersections with the word lines. Each horizontal memory cell can be programmed by ion implantation. Similarly, the bit lines on lateral sides of the mesa regions utilize channel areas between each neighboring pair of source/drain regions in the vertical direction to define a plurality of vertical memory cells at these intersections. Each vertical memory cell can be programmed by ion implantation.
REFERENCES:
patent: 5429973 (1995-07-01), Hong
patent: 5460987 (1995-10-01), Wen et al.
patent: 5510287 (1996-04-01), Chen et al.
Tsai Jey
United Microelectronics Corporation
LandOfFree
Method for fabricating read-only memory device with a three-dime does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating read-only memory device with a three-dime, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating read-only memory device with a three-dime will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-800810