Method for manufacturing a semiconductor device using a silicon

Details Method for manufacturing a semiconductor device using a silicon Method for manufacturing a semiconductor device using a silicon

1995-08-23

1997-12-02

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437 41, 437973, 148DIG16, 257 66, H01L 2184

Patent

active

056935412

ABSTRACT:
An amorphous silicon film is formed on a glass substrate by a CVD method, and a mask is formed of a silicon nitride film. Then, nickel is selectively doped into the amorphous silicon film by spin-coating solution containing nickel onto the amorphous silicon film. Thereafter, the amorphous silicon film is crystallized by a thermal treatment.

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