Buried heterostructure semiconductor laser device

Details Buried heterostructure semiconductor laser device Buried heterostructure semiconductor laser device

1987-12-08

1990-03-20

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

049107445

ABSTRACT:
A semiconductor laser device comprising a semiconductor substrate, an active layer having a refractive index greater than that of said substrate and having an energy gap smaller than that of said substrate, and a cladding layer having a conductivity type different from that of said substrate, in that order, resulting in a double-heterostructure, wherein two parallel grooves with a given distance therebetween are disposed in the double-heterostructure so as to reach said substrate and a first burying layer having the same conductivity type as said substrate, a second burying layer having a conductivity type different from that of said substrate and a third burying layer having the same conductivity type as said substrate are disposed outside of the two grooves in that order, and moreover a semiconductor layer with the flat surface having a conductivity type different from that of said substrate is disposed over the third burying layer and the area positioned between the two parallel grooves.

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patent: 4525841 (1985-06-01), Kitamura et al.
patent: 4573161 (1986-02-01), Sakai et al.
patent: 4597085 (1986-06-01), Mito et al.
patent: 4661961 (1987-04-01), Nelson et al.
patent: 4730329 (1988-03-01), Yoshida et al.
patent: 4745612 (1988-05-01), Hayakawa et al.
patent: 4839900 (1989-06-01), Yoshida et al.
Smith, Xerox Disclosure Journal, 11(4):151-152; "A Method for Fabricating an Index Guided Laser".
Hayakawa et al. (1986), Applied Physics Letters, 49(11):636-638; "Low Current Threshold AlGaAs Visible Laser Diodes with an (AlGaAs).sub.n (GaAs).sub.m Supper Lattice Quantum Well".

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