Semiconductor device having a metal electrode interconnection fi

Details Semiconductor device having a metal electrode interconnection fi Semiconductor device having a metal electrode interconnection fi

1988-02-11

1990-03-20

James, Andrew J.

357 67, H01L 2946, H01L 2954

Patent

active

049105787

ABSTRACT:
A semiconductor device comprises a silicon substrate (1) formed with impurity diffusion layers (5, 9) in a region defined by insulating films (2a, 2b) for separating elements and an aluminum alloy film (11) for electrode interconnection having a contact hole portion 7 whose bottom is electrically in contact with the impurity diffusion layers (5, 9). A titanium silicide (TiSi.sub.2) film (4) is deposited on the surfaces of the impurity diffusion layers (5, 9) to reduce sheet resistivity thereof as well as reduce contact resistance between the same and the aluminum alloy film (11). A molybdenum silicide (MoSi.sub.2) film (8) is further formed thereon to prevent the TiSi.sub.2 film (4) from corrosion in removal of an oxide film through etching, while a titanium nitride (TiN) film (10) is formed thereon to prevent thermal reaction of the aluminum alloy film (11) and the MoSi.sub.2 film (8).

REFERENCES:
patent: 3537174 (1970-11-01), May
patent: 3607240 (1971-09-01), Kunert
patent: 4361599 (1982-11-01), Wourm
patent: 4458410 (1984-07-01), Sugaki et al.
patent: 4566026 (1986-01-01), Lee et al.
Thin Solid Films, 96 (1982) 327-345 Elec. & Optics, Ting et al. "The Use of Titanium-Based . . . Technology".
Wittmer, J. Vac. Sci. Technol. A2 (2), Apr.-Jun. 1984, pp. 273-278, "Barrier Layers:Princ. and Appl. in Microelec."
IBM TDB vol. 25 No. 4 Sep. 1982 "Enhanced Polycide Structures" Campbell & Sullivan.
J. Vac. Sci. Tech. 17(4) Jul./Aug. 1980.
"Refract. Sil. for Int. Circ." Muraska pp. 775-791.r i
Sequeda, Jour. of Metals Nov. 1985. "The Role of Thin Film . . . Fabrication" pp. 54-59.

Affiliated with

Also associated with

Rating

Semiconductor device having a metal electrode interconnection fi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having a metal electrode interconnection fi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having a metal electrode interconnection fi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-796004