Image sensor

Details Image sensor Image sensor

1989-05-01

1990-03-20

James, Andrew J.

357 30, 357 49, H01L 2978, H01L 2714, H01L 2712

Patent

active

049105680

ABSTRACT:
Field isolation between arrayed picture cells of an image sensor is fabricated thinner than the insulation layer for the peripheral portion of CCD operatively connected to picture cells. The field isolation is fabricated by a selective thermal oxidization, by which the isolation film inflates not only vertically but also laterally, therefore the thinner isolation layer can be narrower. And, the lower applied voltage to the picture cell than applied voltage to the CCD portion allows the narrower isolation. The narrower field isolation between the picture cells allows greater density of integration of the picture cells. Procedures to embody the invention are disclosed, one of which is to fabricate the thinner isolation first, and another one is the thicker insulation layer first.

REFERENCES:
patent: 4378565 (1983-03-01), Ghezzo et al.
patent: 4484210 (1984-11-01), Shiraki et al.
patent: 4618874 (1986-10-01), Yamada
patent: 4658278 (1987-04-01), Elabd et al.
patent: 4675982 (1987-06-01), Noble, Jr. et al.

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