Method for forming epitaxial silicon on insulator structures usi

Details Method for forming epitaxial silicon on insulator structures usi Method for forming epitaxial silicon on insulator structures usi

1988-11-04

1990-03-20

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG26, 148DIG17, 148DIG152, 156613, 357 49, 437 62, 437 71, 437170, 437239, H01L 2120

Patent

active

049101650

ABSTRACT:
A silicon on insulator fabrication process and structure. The fabrication process includes a reproducible sequence in which an oxide covered substrate is anisotropically etched in the presence of a mask to form trenches which extend into the substrate. Epitaxial silicon is selectively grown in the trench regions in a sucession of first materially doped and thereafter lightly doped layers. The materially doped layer extends above the plane defined by the surface of the substrate. Following a selective removal of the oxide, the materially doped epitaxial layer is exposed at its sidewalls first to an anodization and then to an oxidation ambient. This successive conversion of the materially doped epitaxial layer first to porous silicon and then silicon dioxide dielectric isolates the lightly doped epitaxial layer from the substrate. Planarization of the structure and exposure of the epitaxial surfaces provides electrically isolated islands of monocrystalline silicon for bipolar and field effect device fabrication. A CMOS implementation of the epitaxial islands is readily undertaken by selective counterdoping in the presence of a mask.

REFERENCES:
patent: 3640806 (1972-02-01), Watanabe et al.
patent: 3919060 (1975-11-01), Pogge et al.
patent: 3954523 (1976-05-01), Magdo et al.
patent: 4016017 (1977-04-01), Aboaf et al.
patent: 4104090 (1978-08-01), Pogge
patent: 4380865 (1983-04-01), Frye et al.
patent: 4393577 (1983-07-01), Imai
patent: 4604162 (1986-08-01), Sobczak
patent: 4628591 (1986-12-01), Zorinsky et al.
patent: 4810667 (1989-03-01), Zorinsky et al.

Affiliated with

Also associated with

Rating

Method for forming epitaxial silicon on insulator structures usi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming epitaxial silicon on insulator structures usi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming epitaxial silicon on insulator structures usi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-792707