Method for low temperature growth of silicon epitaxial layers us

Details Method for low temperature growth of silicon epitaxial layers us Method for low temperature growth of silicon epitaxial layers us

1988-06-09

1990-03-20

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG57, 148DIG45, 156610, 437 85, 437131, 437171, 437939, H01L 2120

Patent

active

049101633

ABSTRACT:
Silicon epitaxial layers are grown on oriented silicon substrates using an open-tube Si-I.sub.2 chemical vapor deposition (CVD) reactor in the temperature range of 650.degree.-740.degree. C. Hydrogen and inert gases such as helium and argon are used as carrier gases, and the iodine/carrier gas mixture contacts the silicon source to produce silicon iodide which disproportionates to deposit pure silicon epitaxial layers on the substrate.

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