Manufacturing method of thin film transistor

Details Manufacturing method of thin film transistor Manufacturing method of thin film transistor

1991-07-30

1994-06-07

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437101, 437233, 257 66, 257 72, H01L 2904, H01L 29784

Patent

active

053189191

ABSTRACT:
A manufacturing method of a thin film transistor, wherein a laminated body consisting of an intrinsic amorphous silicon layer and a conductive amorphous silicon layer is formed on a glass substrate, and annealed at low temperatures not higher than 600.degree. C. thereby obtaining a polycrystalline silicon film. The conductive amorphous silicon layer gives girth to a core for polycrystallization, and therefore the intrinsic amorphous silicon layer is easily recrystallized by annealing at low temperatures.

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Japan J. Appl. Phys. vol. 21, No. 6, Jun., 1982, pp. L381-L383.

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