Processing apparatus and method

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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Details

427 541, 427 531, 118722, 118723, 437241, C23C 1650

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active

049100432

ABSTRACT:
A processing apparatus and method utilizing a single process chamber for deposition of silicon nitride with a silicon source, a remote plasma including a nitrogen source, additional ultraviolet energy coupled into the process chamber to provide additional molecular excitation of the silicon source.

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