Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

1994-06-13

1996-05-28

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 21, 257 22, H01L 2906, H01L 310328, H01L 310336, H01L 31072

Patent

active

055213960

ABSTRACT:
In a light emitting device made of a group II-VI semiconductor of ZnCdSSe or MgZnCdSSe, to facilitate the movement of electrons or holes from a GaAs substrate to a group II-VI semiconductor film and to flow the current at a low voltage, a ZnSe--AlGaAs super lattice layer is formed between the group II-VI semiconductor film and the GaAs substrate so that the energy band from the substrate to the group II-VI semiconductor film rises in steps or gradually. In an device where an N-type semiconductor layer of the group II-VI semiconductor film is arranged on the side of the substrate, a P-type semiconductor film which raises the energy band from the electrode to the P-type semiconductor layer in steps is formed between the electrode and the P-type semiconductor layer which is the top layer of the group II-VI semiconductor film.

REFERENCES:
patent: 4695857 (1987-09-01), Baba et al.
patent: 4792832 (1988-12-01), Baba et al.
patent: 5262660 (1993-11-01), Streit et al.
patent: 5319219 (1994-06-01), Cheng et al.
patent: 5338947 (1994-08-01), Watanabe
Tan et al, "High-Pwr V-Band . . . HEMT", IEEE Elec. Dev. Lttrs,, vol. 12 No. 5, pp. 213-214, May 91.

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