1989-03-23
1991-06-11
Hille, Rolf
357 70, H01L 2354, H01L 2348
Patent
active
050236989
ABSTRACT:
A metallization film layer disposed on a semiconductor chip is made of Cu alloy which contains a metal element less noble than Cu and whose balance consists of Cu and unavoidable impurities. The metal element less noble than Cu is at least one kind of members selected from the group consisting of Al, Be, Cr, Fe, Mg, Ni, Si, Sn and Zn. Cu alloy as the metallization film layer improves corrosion resistance by adding a trance amount of a metal element less noble than Cu within such a range where electric conductivity is not much reduced to Cu without lowering high electric conductivity, high heat resistance and high electro-migration resistance of Cu.
REFERENCES:
patent: 4704626 (1987-11-01), Mahulikar et al.
patent: 4732733 (1988-03-01), Sakamoto et al.
patent: 4750029 (1988-06-01), Fatatsuka et al.
patent: 4805009 (1989-02-01), Pryor et al.
Itoh Masahiko
Kobayashi Shiro
Murofushi Emiko
Clark S. V.
Hille Rolf
Hitachi , Ltd.
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-787158