Process for fabricating a collimated metal layer and contact str

Details Process for fabricating a collimated metal layer and contact str Process for fabricating a collimated metal layer and contact str

1994-12-15

1996-12-03

Quach, T. N.

Fishing, trapping, and vermin destroying

437194, 437246, 20419217, H01L 21283

Patent

active

055808239

ABSTRACT:
A process for fabricating a semiconductor device which includes forming a collimated metal layer (54) on the surface of a semiconductor substrate (24), while maintaining the temperature of the substrate preferably below about 100.degree. C., and most preferably below about 25.degree. C. The collimated metal layer (54) is formed by directing a stream of metal atoms through a collimator (18) and onto the surface of the substrate (24). The temperature of the substrate (24) is controlled by supplying a heat transfer fluid from a temperature control system (26) to a vacuum chuck (14) supporting the semiconductor substrate (24). The collimated metal layer (54) is comprised of metal atoms having predominantly a (002) crystallographic orientation. The uniform crystallographic orientation of the collimated metal layer (54) can be used to effect the formation of additional metal layers (58, 62) having uniform crystallographic orientation.

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Rossnagel, S., et al., "Collimated magnetron sputter deposition", J. Vac. Sci. Technol. A9(2), Mar./Apr. 1991, pp. 261-265.
Tohru Hara et al., "Properties of Titanium Layers Deposited by Collimation Sputtering", Oct. 17, 1992, Jpn. J. Appl. Phys. 31 (1992) Pt.2, No. 12B, pp. L1746-L1749.
S. Meikle et al., "Substrate temperature and collimator aspect ratio effects in titanium sputtering", Appl. Phys. Lett., vol. 63, No. 13, Sep. 27, 1993, pp. 1751-1752.

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