Fabrication process for semiconductor optical device

Details Fabrication process for semiconductor optical device Fabrication process for semiconductor optical device

1995-04-28

1996-12-03

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437 89, 148DIG95, H01L 2120

Patent

active

055808182

ABSTRACT:
A SiO.sub.2 mask is formed on an n-type InP substrate. The mask gap width is narrower in a region I (laser region) and wider in a region II (modulator region). With taking the mask as growth blocking masks, an optical guide layer of InGaAsP, an MQW active layer of InGaAs well layer and InGaAsP barrier layer, p-type InP layer are selectively grown. By removing a part of the mask, p-type InP clad layer and p-type InGaAs cap layer are formed. By this, regions having mutually different bandgap can be formed through one selective growth process. Also, it becomes possible to form the regions having large bandgap difference while avoiding lattice mismatching.

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