Method of patterning aluminum containing group IIIb Element

Details Method of patterning aluminum containing group IIIb Element Method of patterning aluminum containing group IIIb Element

1994-03-15

1996-12-03

Thomas, Tom

Fishing, trapping, and vermin destroying

437194, 437245, 437228, 148DIG51, 1566341, 1566381, H01L 2128, H01L 21306, H01L 213213

Patent

active

055808000

ABSTRACT:
A thin film transistor according to this invention has a gate electrode comprising a lower layer of aluminum of a high purity of over 99.5% and an upper layer of aluminum containing over 0.5% silicon. Alternatively, it has a gate electrode made by adding a IIIa group element to a IIIb group element. Residues produced by the etching of the silicon-containing aluminum gate electrode are etched with a mixture solution of hydrofluoric acid, nitric acid and acetic acid. After contact holes have been formed in an interlayer insulating film, laser annealing is carried out, and metal electrodes are formed in the contact holes thereafter.

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Ganiev, I. N., et al., J. Appl. Chem. USSR, 58,10(1985)2366 "Effect of Lanthanum . . . on the Anodic Behavior of Al . . . ".
Ganiev, I. N., et al., J. Appl. Chem. USSR, 60,9(1987)2119 "Anodic Behavior of Al:Sc (Y) Alloys . . . ".
Labunov, V. A., et al., Dokl. Akad. Nauk, BSSR, 28,3(1984)215 ". . . Anions into an Anodic Oxide Film on Al".
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Translation of JP 56-138929.
Full text of the Tsutsu Article Cited in Previous Action.
H. Tsutsu, et al., 1992 Proc. Electrodreur SOC (TFT Symp), p. 138, ". . . Etching Technology of Al-2% Si Alloy".
S. Wolf & R. N. Tauber "Silicon Processing for the VLSI ERA", 1986 pp. 531-532, 534-535, vol. I.

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