Method of manufacturing semiconductor device using silicone prot

Details Method of manufacturing semiconductor device using silicone prot Method of manufacturing semiconductor device using silicone prot

1989-01-19

1991-06-11

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437231, 437235, H01L 2102

Patent

active

050232045

ABSTRACT:
A stress relaxation protective layer made of a silicone material is formed on a coating covering a circuit disposed on a substrate of a semiconductor device, and a predetermined depth of the surface of the stress relaxation protective layer is modified. A resist is formed on the thus-modified surface of the stress relaxation protective layer, and the thus-formed resist is patterned so that the resist in a predetermined region is removed. The stress relaxation protective layer in the region from which the above-described resist has been removed is removed by etching, and the remaining resist is removed. Next, the coating layer in the region from which the stress relaxation protective layer has been removed is removed by etching with the remaining stress relaxation protective layer used as a mask so that the circuit is exposed. The manufacturing process for semiconductor devices can be significantly simplified since the resist patterning needs to be performed only once and the resist removal can be performed by a dry treatment.

REFERENCES:
"Effect of Atomic Oxygen on Polymers", Journal of Polymer Science, Part A, vol. 3, pp. 2205-2214, 1965.
"Mechanism of Oxygen Plasma Etching of Polydimethyl Siloxane Films", Applied Physics Letters, vol. 46, Jan. 1, 1985, pp. 31--33.

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