Semiconductor structure

Details Semiconductor structure Semiconductor structure

1990-10-31

1992-08-04

Wojciechowicz, Edward J.

Fishing, trapping, and vermin destroying

357 4, 357 61, 437105, 437107, 437 84, H01L 29161, H01L 21203

Patent

active

051363470

ABSTRACT:
A semiconductor structure includes a single crystal silicon body, a relatively thin single crystal aluminum arsenide layer disposed on the silicon body, a relatively thin single crystal gallium arsenide layer disposed on the aluminum arsenide layer, and a relatively thick single crystal compound semiconductor layer disposed on the gallium arsenide layer.

REFERENCES:
patent: 4845044 (1989-07-01), Ariyoshi et al.
patent: 4862228 (1989-08-01), Ralph
Fisher et al, "Material Properties of High-Quality GaAs Epitaxial Layers Grown On Si Substrates", Journal of Applied Physics, vol. 60, No. 5, Sep. 1986, pp. 1640-1647.
Ueda et al, "Effect of the Substrate . . . Si Substrate", Japanese Journal of Applied Physics, vol. 25, No. 9, Sep. 1986, pp. L789-L791.

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