Implantation and electrical activation of dopants into monocryst

Details Implantation and electrical activation of dopants into monocryst Implantation and electrical activation of dopants into monocryst

1989-05-24

1992-02-11

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 25, 437100, H01L 21265

Patent

active

050875760

ABSTRACT:
The invention is a method of ion implantation of dopant ions into a substrate of silicon carbide. In the method, the implantation takes place at elevated temperatures, following which the substrate may be oxidized or annealed.

REFERENCES:
patent: 4945394 (1990-07-01), Palmour et al.
Edmond et al., "High Temperature Implantation of Single Crystal Beta Silicon Carbide Thin Films", Super Lattices and Thin Films Symp., Boston, Dec. 1-6, 1986.
"Ion Implantation Effects in Silicon Carbide", Excerpt from Oak Ridge National Laboratory (ORNL) Report 6128, Mar. 1986.

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