Method of manufacturing silicon carbide FETS

Details Method of manufacturing silicon carbide FETS Method of manufacturing silicon carbide FETS

1990-03-27

1992-08-04

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 21, 437 40, H01L 2120

Patent

active

051358859

ABSTRACT:
A method of manufacturing a semiconductor device comprises the steps of (i) forming a SiC monocrystal layer over the entire surface of a semiconductor substrate; (ii) forming a boron ion implanted layer, which is substantially a thin film, by implanting a specified amount of boron ions in the surface region of the SiC monocrystal layer; and (iii) forming a high resistance SiC monocrystal layer of a thin film by subjecting the boron ion implanted layer to heat treatment; whereby the high resistance SiC monocrystal layer can be function at least as an electric insulating layer.

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