Photomagnetic memory medium having a non-columnar structure

Details Photomagnetic memory medium having a non-columnar structure Photomagnetic memory medium having a non-columnar structure

1988-10-31

1992-08-04

Thibodeau, Paul J.

Stock material or miscellaneous articles

Composite

Of inorganic material

2041921, 20419212, 20419213, 20419214, 20419215, 2041922, 360131, 360135, 365122, 369 13, 428900, G11B 566, C23G 1400

Patent

active

051358190

ABSTRACT:
A photomagnetic memory medium of an amorphous thin film of a rare-earth transition metal alloy of non-columnar structure deposited on a substrate. In order to achieve the non-columnar structure, the alloy is sputtered in the presence of a plasma but the plasma is confined by a magnetic field so as not to touch the substrate. The alloy is preferably TbFeCo.

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patent: 4784739 (1988-11-01), Kadokura et al.
Naoe et al., "High Rate Deposition of Magnetic Films by Sputtering From Two Facing Targets", J. of Crs y. Growth, vol. 45, Dec. 1978, pp. 361-364.
"Structure of Amorphous TbFeCo Thin Films Prepared by Facing Targets Sputtering", Proceeding of International Symposium on Magneto-Optics, Apr. 1987.
"DC Magnetron-and diode-sputtered polycrystalline . . . ", by M. Hong, et al., Journal of Applied Physics.
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Search Rept. for the West German Patent Office.
Search Rept. from British Patent Office.

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