II-VI laser diode with facet degradation reduction structure

Details II-VI laser diode with facet degradation reduction structure II-VI laser diode with facet degradation reduction structure

1997-11-17

1999-10-26

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 50, H01S 319

Patent

active

059740701

ABSTRACT:
A II-VI semiconductor laser diode having a semiconductor body comprising a plurality of semiconductor layers forming a pn junction, a facet at one end of the body, and a reference electrode. The laser diode further includes a facet degradation reduction electrode located adjacent to the facet. The facet degradation reduction electrode is electrically isolated from a forward bias electrode. The facet degradation reduction electrode is used to establish an electric field sufficient to reduce facet degradation. In one embodiment, this electric field is established by applying a reverse-bias voltage between the facet electrode and the reference electrode. In another embodiment, this electric field is established by electrically connecting the facet electrode to the reference electrode.

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Reliability and Degradation of Semiconductor Lasers and LEDs, Mitsuo Fukuda, pp. 128-136. (1991) no month available.
IEEE Photonics Technology Letters, "InGaAs-GaAs Quantum-Well Lasers with Monolithically Integrated Intracavity Electroabsorption Modulators by Selective-Area MOCVD", vol. 8, No. 1, R.M. Lammert et al., Jan. 1996, pp. 78-80.

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