Semiconductor integrated circuit device and method of manufactur

Details Semiconductor integrated circuit device and method of manufactur Semiconductor integrated circuit device and method of manufactur

1991-07-12

1992-09-01

Carroll, J.

357 36, 357 67, 357 68, 357 71, H01L 2972, H01L 2348

Patent

active

051444089

ABSTRACT:
A semiconductor device includes a bipolar transistor and an IIL element fabricated on a single wafer. The emitter region of the bipolar transistor is formed by diffusing the impurity of an impurity layer formed in contact with the base region therein. The impurity layer is formed of a polycide layer formed of a polysilicon layer doped with an impurity and a metal silicide layer laminated on the polysilicon layer, a laminated layer of a polysilicon layer and a refractory metal layer, or a metal silicide layer.

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