Power semiconductor device with switch-off facility

Details Power semiconductor device with switch-off facility Power semiconductor device with switch-off facility

1991-02-01

1992-09-01

Hille, Rolf

357 37, 357 39, 357 234, 357 15, H01L 2974, H01L 29747, H01L 2910, H01L 2948

Patent

active

051444003

ABSTRACT:
In an MOS-controlled power semiconductor device with switch-off facility having a thyristor-like structure, the switch-off capability is improved by inserting emitter ballast resistors between the first main electrode (H1) and the associated emitter region (8). For this purpose, the emitter region (8) is of annular or strip-like construction and encloses a more weakly doped central region (9) which is exclusively contacted by the first main-electrode metallization (2).

REFERENCES:
patent: 3427511 (1969-02-01), Rosenzweig
patent: 4717940 (1988-01-01), Shinohe et al.
patent: 4760431 (1988-07-01), Nakagawa et al.
patent: 4954869 (1990-09-01), Bauer
patent: 5016066 (1991-05-01), Takahashi
International Electron Devices Meeting, Dec. 1-4, 1985, pp. 158-161, M. Stoisiek, et al., "MOS GTO-A Turn Off Thyristor with MOS-Controlled Emitter Shorts".
Patent Abstracts of Japan, vol. 13, No. 150 (E-742) (3498), Apr. 12, 1989, and JP-A-63-310171, Dec. 19, 1988, M. Mori, "Composite Semiconductor Device".
Earlier Swiss Patent Application, CH-2945/89-4, Aug. 10, 1989.

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