Semiconductor device and photoelectric conversion apparatus usin

Details Semiconductor device and photoelectric conversion apparatus usin Semiconductor device and photoelectric conversion apparatus usin

1991-12-31

1992-09-01

James, Andrew J.

357 16, 357 59, 357 61, H01L 2972

Patent

active

051443988

ABSTRACT:
A semiconductor device comprises an emitter of first conductivity type, a base of second conductivity type, and a collector of first conductivity type. At least a vicinity of an interface of the emitter to base junction is formed by Si. Polycrystalline or single crystalline Si.sub.1-x C.sub.x (x.ltoreq.0.5) is formed on a region formed by the Si of said emitter. A junction between a region of the Si and a region of the polycrystalline and the single crystalline Si.sub.1-x C.sub.x is a graded hetero junction.

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