Capping layer fabrication

Details Capping layer fabrication Capping layer fabrication

1989-12-04

1992-09-01

Prenty, Mark V.

357 63, 357 20, 357 68, 357 16, H01L 2714, H01L 29167, H01L 2348, H01L 29161

Patent

active

051443961

ABSTRACT:
A planar, p-n junction device has electrical contact made to the active region, the capping layer (4) having been selectively removed through a mask (5, 6). The selective removal of the capping layer may be performed prior to a diffusion step in which the junction is formed, or the dopant may be diffused through the capping layer (4) and the selective removal performed subsequently. In the latter instance the capping layer (4) is preferably etched through a second mask (8,9) having a smaller window (9) in register with the window (6) in the mask layer (5) which is used for the diffusion stage. The device finds particular application as a photodiode detector in optical communications.

REFERENCES:
patent: 4499483 (1985-02-01), Yamazaki et al.
patent: 4624004 (1986-11-01), Calviello
IEEE Journal of Quantum Electronics, vol. QE-21, Nr. 2, Feb. 1985, pp. 138-143, New York, US, O. K. Kim et al. "A low dark-current, planar InGaAs p-i-n photodiode with a quaternary InGaAsP cap layer" pp. 138-139.
Patent Abstracts of Japan, vol. 0, No. 263 (E-351) [1986] Oct. 19, 1985; & JP-A060 110 177 (Fujitsu K.K.) Jun. 15, 1985.

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