Semiconductor device and method for fabricating same

Details Semiconductor device and method for fabricating same Semiconductor device and method for fabricating same

1990-08-31

1992-09-01

Prenty, Mark V.

357 231, 357 49, 357 20, 357 54, 357 68, H01L 2906, H01L 2701, H01L 2712, H01L 2934

Patent

active

051443945

ABSTRACT:
The structure of a MOSFET and a method for fabricating the same is disclosed, with which it is possible to increase the driving capacity. Heretofore there was a problem that no measures were taken against the decrease in the channel width due to bird's beaks produced at the formation of a field oxide film and that the channel width at the completion of the manufacturing process was smaller than that foreseen during the design of the device. To overcome this problem, a MOSFET is provided in which the junction of the source or the drain is extended up to the end portions in the channel direction so that the effective channel width is determined by the width of the junction on the sides, where the junction is not extended up to the end portions in the channel direction.

REFERENCES:
patent: 3938174 (1976-02-01), Sano
patent: 4044452 (1977-08-01), Abbas et al.
patent: 4523213 (1985-06-01), Konaka et al.
patent: 4536782 (1985-08-01), Brown

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