Structure for a PSD type field effect transistor

Details Structure for a PSD type field effect transistor Structure for a PSD type field effect transistor

1991-05-22

1992-09-01

Wojciechowicz, Edward J.

357 238, 357 55, 357 59, H01L 2906

Patent

active

051443937

ABSTRACT:
A field effect transistor including a gate electrode, a source electrode and a drain electrode which are formed on a major surface of a silicon substrate. An impurity contained in the source electrode and the drain electrode is diffused into the silicon substrate by heat treatment of thereby form source and drain areas of the transistor. The source electrode and the drain electrode are electrically insulated from the gate electrode by a side-wall insulating film. The side-wall insulating film and the gate insulating film are formed by separate steps, so can each be formed in optimum thickness.

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patent: 4636834 (1987-01-01), Shepard
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