High-speed heterojunction light-emitting diode

Details High-speed heterojunction light-emitting diode High-speed heterojunction light-emitting diode

1991-04-04

1992-09-01

Mintel, William

357 16, 357 55, 357 56, H01L 3300

Patent

active

051443775

ABSTRACT:
A high-speed heterojunction light-emitting diode is formed by providing a dielectric layer on a heavily doped semiconductor substrate having short minority carrier lifetime. A semiconductor layer of opposite conductivity to the substrate is epitaxially grown through vias in the dielectric layer. This results in a junction area equal to the useful light-emitting area. An electrical contact is formed on the laterally overgrown area of the epitaxially grown material. The diode manufacture is compatible with planar processing techniques commonly used in integrated circuit manufacture.

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