Semiconductor integrated circuit including a fuse element

Details Semiconductor integrated circuit including a fuse element Semiconductor integrated circuit including a fuse element

1984-10-04

1985-05-14

James, Andrew J.

357 50, 357 51, 357 45, H01L 2910, H01L 2912, H01L 2186, H01L 2976

Patent

active

045175837

ABSTRACT:
A semiconductor integrated circuit includes a transistor element, an insulating layer formed adjacent to the transistor, and a wiring connected to the transistor element at one end thereof and having a fuse as a part thereof. The wiring is made of monocrystalline silicon and formed on the insulating layer providing a substantially constant burn out current value for the fuse, and thus highly reliable operation of the circuit.

REFERENCES:
patent: 3533088 (1970-10-01), Rapp
patent: 3584183 (1971-06-01), Chiaretta
patent: 3699395 (1972-10-01), Boleky
patent: 3792319 (1974-02-01), Tsang
patent: 4017769 (1977-04-01), Raetzel et al.
patent: 4045310 (1977-08-01), Jones et al.
Kokkonen et al., "Redundancy Techniques for Fast Static RAMs", 1981 IEEE-Int'l Solid State Circuits Conf. Dig. of Tech. Papers, 80-81, (Feb. 18, 1981).

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