Manufacture of monolithic infrared focal plane arrays

Details Manufacture of monolithic infrared focal plane arrays Manufacture of monolithic infrared focal plane arrays

1989-10-05

1990-10-23

Larkins, William D.

357 16, 357 61, H01L 2714, H01L 3100

Patent

active

049656490

ABSTRACT:
The manufacture of monolithic HgCdTe detectors and Si circuitry in an IR focal plane array is achieved by forming a protective layer of SiO.sub.2 or SiN.sub.x on a silicon wafer containing silicon circuits, etching steep-wall recesses into the wafer, selectively depositing epitaxial single-crystal layers of GaAs, CdTe, and HgCdTe in the recesses fabricating HgCdTe IR arrays, and depositing appropriate insulating and conductive interconnection patterns to interconnect the Si devices with one another and the HgCdTe devices with the Si devices. Little or no GaAs, CdTe, and HgCdTe grows on the SiO.sub.2 or SiN.sub.x outside the recesses. Since material grown outside the recess is polycrystalline, it is easily chemomechanically removed.

REFERENCES:
patent: 4228365 (1980-10-01), Gutierrez et al.
patent: 4276099 (1981-06-01), Keen et al.
patent: 4553152 (1985-11-01), Nishitani
patent: 4588451 (1986-05-01), Vernon
patent: 4689650 (1987-08-01), Dinan
patent: 4904607 (1990-02-01), Riglet et al.

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