Semiconductor device of multilayer wiring structure

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357 52, 357 71, H01L 2144, H01L 2147, H01L 2194

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active

046138889

ABSTRACT:
A semiconductor device is disclosed which includes a multilayer formed of a hard inorganic main insulation film and a soft subinsulation film as insulation interlayers, and a hard inorganic insulation film as a final passivation film. The final passivation film is directly deposited on the hard inorganic main insulation film of the multilayer.

REFERENCES:
patent: 4040083 (1977-08-01), Saiki et al.
patent: 4123565 (1978-10-01), Sumitomo et al.
patent: 4396934 (1983-08-01), Nishida
Mukai et al, IEEE J. of S.S.C. , vol. SC-13, No. 4, Aug. 1978, "Planar Multilevel., Polyimide", pp. 462-467.

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