Dynamic semiconductor memory cell and method for its manufacture

Details Dynamic semiconductor memory cell and method for its manufacture Dynamic semiconductor memory cell and method for its manufacture

1980-05-08

1986-09-23

Clawson, Jr., Joseph E.

Static information storage and retrieval

Magnetic bubbles

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357 236, 357 2311, 357 51, 357 59, 365149, 365182, H01L 2978

Patent

active

046138838

ABSTRACT:
A dynamic semiconductor memory cell has a field effect transistor and a memory capacitor formed on a semiconductor body. In addition to a first zone, doped oppositely with respect to the doping of the semiconductor body, further zones are formed parallel to the boundary surface of the body and doped with the same conductivity of the semiconductor body, but to a higher degree. The further zones lie below regions at the boundary surface which are doped opposite to the semiconductor body. The further zones include edge portions which extend up to the boundary surface and which limit the regions thereabove in the lateral direction. A gate is provided and in an area of the semiconductor body beneath the gate and adjacent to the boundary surface a region is provided, doped opposite to the semiconductor body and connecting the edge portions. The edge portions, at the boundary surface, form a two-part channel area of the field effect transistor.

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