Semiconductor photodetector having an optical attenuator

Details Semiconductor photodetector having an optical attenuator Semiconductor photodetector having an optical attenuator

1997-11-12

1999-10-26

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

257431, 257436, 257458, 257464, 25037014, 359248, H01L 29205, H01L 310304, G02F 1015

Patent

active

059733390

ABSTRACT:
A waveguide type semiconductor photodetector device comprises a photosensitive section including a photo-absorption layer for converting a signal light into an electric signal, and an optical attenuation section including an optical attenuation layer made of a bulk crystal for attenuating incident light. Assuming that E.sub.g.ATT and E.sub.in are bandgap energy of the optical attenuation layer and optical energy of the incident light signal, respectively, E.sub.in +50 meV.ltoreq.E.sub.g,ATT .ltoreq.E.sub.in +100 meV holds. The optical absorption layer and the optical attenuation layer are made of GaInAs and GaInAsP, respectively, for adapting to incident light of a 1.55 mm wavelength.

REFERENCES:
patent: 5311221 (1994-05-01), Voddani
patent: 5321275 (1994-06-01), Shimizu
patent: 5528413 (1996-06-01), Ishimura

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