Method of manufacturing MES FET

Details Method of manufacturing MES FET Method of manufacturing MES FET

1988-08-29

1992-09-01

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 39, 437 41, 437177, 437185, 148DIG105, 148DIG140, H01L 21338

Patent

active

051438569

ABSTRACT:
A GaAs epitaxial layer is formed on a semi-insulative GaAs substrate by use of a crystal growth technique which allows control on the order of atomic layer level. A metal film is formed on the GaAs epitaxial layer by use of the same crystal growth technique. Ions are implanted in source and drain high-concentration layer-forming regions, through the metal film, and are activated.

REFERENCES:
patent: 4330343 (1982-05-01), Christou et al.
patent: 4546540 (1985-10-01), Ueyanagi et al.
patent: 4581076 (1986-04-01), Badawi
patent: 4601095 (1986-07-01), Kikuchi et al.
patent: 4642879 (1987-02-01), Kawata et al.
patent: 4675709 (1987-06-01), Scifres et al.
patent: 4735913 (1988-04-01), Hayes
Levy et al., "Self-Aligned Submicron Gate Digital GaAs Integrated Circuits", IEEE Electron Device Letters, vol. EDL-4, No. 4, Apr. 1983, pp. 102-104.
Abe et al., "New Technology Towards GaAs LSI/VLSI for Computer Applications", IEEE Trans. on Electron Devices, vol. ED-29, No. 7, Jul. 1982, pp. 1088-1094.
P. E. Luscher et al., "Automated Molecular Beams Grow Thin Semiconducting Films", Electronics Internatinal, vol. 53, No. 19, Aug. 28, 1990, pp. 160-168.
T. Ishida et al., "GaAs MESFET Ring Oscillator On Si Substrate", IEEE Transactions on Electron Devices, vol. ED-32, No. 6, Jun. 1985, pp. 1037-1041.
Ghandhi, VLSI Fabrication Principles, New York: John Wiley and Sons, Inc., 1983, pp. 330-337, 437-439.

Affiliated with

Also associated with

Rating

Method of manufacturing MES FET does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing MES FET, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing MES FET will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-767472