Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Patent
1995-07-11
1997-06-10
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
338 32R, H01L 2982, H01L 4300
Patent
active
056379064
ABSTRACT:
A detecting region of a magnetic sensor, for converting magnetic signal from a magnetized member into an electric signal and detecting a moving condition of the magnetized member on the basis of the electric signal has a laminated structure of a first and second magnetic layers each formed of a lamination of ultra thin films of a magnetic material and an intermediate non-magnetic layer formed of a lamination of ultra thin films of a non-magnetic material and disposed between the first and second magnetic layers. Particularly, thickness of each of the first and second magnetic layers is in a range from 3 nm to 10 nm and thickness of the intermediate non-magnetic layer is 3 nm or more. In a concrete example of the laminated structure, each of the first and second magnetic layers is composed of a lamination of atomic layers of nickel (Ni), iron (Fe) or an alloy of iron and nickel and the intermediate non-magnetic layer is composed of a lamination of 13 atomic layers or more of silver (Ag). The magnetic sensor has a magnetoresistance change rate which is considerably larger than that of a conventional sensor.
REFERENCES:
patent: 5476680 (1995-12-01), Coffey et al.
patent: 5500633 (1996-03-01), Saito et al.
"Anisotropic Magnetoresistance in Ferromagnetic 3d Alloys", IEEE Trans. Mag, Mag-11, No.4, P1018 (Jul., 1975).
Abraham Fetsum
Fahmy Wael
NEC Corporation
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