Method of backside heating a semiconductor substrate in an evacu

Details Method of backside heating a semiconductor substrate in an evacu Method of backside heating a semiconductor substrate in an evacu

1983-04-08

1985-05-14

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 29576T, 148187, 219 1055A, 219 1055M, 219 1055R, 357 91, 427 451, 427 531, H01L 21263, H05B 903, H05B 980

Patent

active

045170266

ABSTRACT:
A semiconductor substrate arranged in a vacuum treating chamber is heated by using microwaves. The chamber is provided with a window plate pervious to microwaves, and the substrate is mounted on the window plate. A microwave generator is arranged outside of the chamber. The radiated microwaves are guided to the window plate, penetrate it, and are absorbed by the semiconductor substrate, so that the substrate is directly heated to a predetermined temperature in a short time. Since no microwaves leak through the substrate, no parts in the chamber are heated.

REFERENCES:
patent: 4140887 (1979-02-01), Sutton et al.
patent: 4269581 (1981-05-01), Ury et al.
patent: 4273950 (1981-06-01), Chitre
patent: 4303455 (1981-12-01), Splinter et al.
patent: 4314128 (1982-02-01), Chitre
patent: 4339295 (1982-07-01), Boretos et al.
patent: 4339648 (1982-07-01), Jean
patent: 4351998 (1982-09-01), Keppel
patent: 4412388 (1983-11-01), Takagi et al.
patent: 4419379 (1983-12-01), Kaplan

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