Method of forming an interconnection between conductive levels

Details Method of forming an interconnection between conductive levels Method of forming an interconnection between conductive levels

1990-01-16

1990-10-23

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437194, 437195, 437190, 437192, 437228, 437231, 437245, H01L 2190

Patent

active

049652265

ABSTRACT:
A method of forming an interconnection between conductive levels is described in which a first conductive level (4) is provided on a surface of a substrate body such as a semiconductor body (1) so that the first conductive level (4) has a contact area (10). Passivating material (6) is provided on the surface of the body (1) to cover the first conductive level (4) and the contact area (10) is then exposed by opening in the passivating material (6) a window (9) larger than the contact area (10) so that there is a gap (11) between the periphery (9a) of the window (9) and a side wall (5a) of the first conductive level (4) bounding the contact area (10). After opening the window (9) material (13b) is provided in the gap (11). Preferably, the material is provided by applying and then solidifying a spin-on-glass and subsequently etching back the spin-on-glass to expose the contact area. A second conductive level (7) is then provided on the smoothed surface to smooth the surface between the periphery (9a) of the window (9) and the contact area (10) so that part of the second conductive level (7) contacts the area (10) within the window (9).

REFERENCES:
patent: 4619839 (1986-10-01), Lehrer
patent: 4710264 (1987-12-01), Waschler et al.
patent: 4719125 (1988-01-01), Anello et al.
patent: 4768962 (1988-11-01), Koch
patent: 4824521 (1989-04-01), Kulkarni et al.

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