Method of manufacturing an epitaxial indium phosphide layer on a

Details Method of manufacturing an epitaxial indium phosphide layer on a Method of manufacturing an epitaxial indium phosphide layer on a

1989-10-02

1990-10-23

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG110, 148DIG119, 156613, 437 88, H01L 2120

Patent

active

049652222

ABSTRACT:
A method of manufacturing an epitaxial InP layer on a substrate surface by means of a MOVPE process at atmospheric pressure, cyclopentadienyl indium (I) or alkyl cyclopentadienyl indium (I) being used as the indium precursor, thereby precluding side reactions.

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Staring et al., "Oganometallic Vapor Phase Epitoxy . . . Using . . . Methylcyclo-Bentadienylindium," J. Am. Soc., 111(19), 1989, pp. 7648-7650.
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Long et al., " . . . Growth of Semi-Insulating InP by MOCVD", J. Crys. Growth, vol. 77, Nos. 1-3, Sep. 1986, pp. 42-46.

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