Method of reducing wafer particles after partial saw

Details Method of reducing wafer particles after partial saw Method of reducing wafer particles after partial saw

1997-05-08

1998-10-06

Picardat, Kevin

Semiconductor device manufacturing: process

Semiconductor substrate dicing

438462, H01L 2146

Patent

active

058175695

ABSTRACT:
A method of fabricating a monolithic device, preferably a micromechanical device, from a wafer (20) by carefully selecting the composition of two or more layers of photoresist (52,54). The present invention comprises choosing compatible photoresist layers to avoid generating defects in the layers of photoresist which could allow a wet chemical HF acid etch process to damage an underlying micromechanical device. The present invention allows a very strong solution of hydrofluoric acid to be utilized to remove particles and debris after a partial-saw process, and to remove a damaged portion of an underlying CMOS layer (22) at a region (68) proximate a kerf (62). Using an HF solution having a concentration of about 6% is desired. The present invention substantially improves the yield of micromechanical devices.

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