Etching apparatus using a plasma

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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Details

156643, 156646, 204192E, C23F 102

Patent

active

040947220

ABSTRACT:
An etching device uses a gas activated by a plasma for etching a semiconductor element. The apparatus includes object feeding and etching chambers formed on the opposite sides of an airtight flat chamber and a support plate rotatably mounted in the flat chamber to bring the semiconductor element from the feeding chamber to the etching chamber in which the semiconductor element is etched by the vertically flowing activated gas.

REFERENCES:
patent: 3632494 (1972-01-01), Herte et al.
patent: 3827966 (1974-08-01), Needham
patent: 3906892 (1975-09-01), Cakenbagle
patent: 3933644 (1976-01-01), Skinner et al.
patent: 3971684 (1976-07-01), Muto
patent: 4009680 (1977-03-01), Fengler

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