Semiconductor etching process

Details Semiconductor etching process Semiconductor etching process

1984-12-28

1986-09-23

Tufariello, T. M.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

20412995, C25F 312

Patent

active

046134174

ABSTRACT:
A photoelectrochemical etching process is described for n-type and semi-insulating III-V semiconductor compounds that contain aluminum or indium (AlGaAs, InGaAs) in which a non-aqueous electrolyte is used. High etch rates are achieved without harm to exposed metallization or p-layers. An exemplatory application is the separation of chips (e.g., LED chips) after wafer processing.

REFERENCES:
patent: 4389291 (1983-06-01), Kohl et al.
patent: 4404072 (1983-09-01), Kohl et al.
patent: 4414066 (1983-11-01), Forrest et al.
patent: 4415414 (1983-11-01), Burton et al.
patent: 4482443 (1984-11-01), Bacon et al.

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