Method for forming element isolation insulating film of semicond

Details Method for forming element isolation insulating film of semicond Method for forming element isolation insulating film of semicond

1996-08-23

1997-06-10

Dang, Trung

Fishing, trapping, and vermin destroying

437 72, 437 24, 437 25, 437 26, H01L 2176

Patent

active

056375298

ABSTRACT:
A method for forming an element isolation insulating film of semiconductor devices, by which junction leakage current can be greatly reduced, comprising the steps of: forming a pad oxide film and a first insulating film on a semiconductor substrate, in sequence; patterning the pad oxide film and the first insulating film to expose an inactive region of the semiconductor device; constructing a spacer with a second insulating film at the side wall of the patterned first insulating film; etching the semiconductor substrate at a certain depth, to form a trench, the patterned first insulating film and the second insulating film spacer serving as a mask; implanting germanium impurities in the trench at a predetermined dose under a predetermined energy, to form an amorphous region to remove the lattice defective occurring upon forming the trench, the patterned first insulating film and the second insulating film spacer serving as a mask; crystallizing the amorphous region by a solid phase epitaxy process; and constructing an element isolation insulating film in the trench by thermal oxidation.

REFERENCES:
patent: 4728619 (1988-03-01), Pfiester et al.
patent: 4920076 (1990-04-01), Holland et al.
patent: 4986879 (1991-01-01), Lee
patent: 5149669 (1992-09-01), Hosaka
patent: 5266510 (1993-11-01), Lee
patent: 5298451 (1994-03-01), Rao

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