Cleaning processing method of a film forming apparatus

Cleaning and liquid contact with solids – Processes – For metallic – siliceous – or calcareous basework – including...

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134 13, 134 19, 134 21, 134 221, 134 251, 134 254, 134 37, 216 67, 427309, 427534, 427535, 427576, 438905, B08B 500, B05D 304

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active

059548878

ABSTRACT:
Disclosed herein is a cleaning processing method in which an object to be processed is mounted on a susceptor in a process chamber of a CVD apparatus, a TiCl.sub.4 gas, a H.sub.2 gas, and a Ar gas are introduced, a Ti film is formed on a surface of the object to be processed in a region of a plasma generated, the object to be processed is conveyed out of the process chamber, supply of the H.sub.2 gas and the Ar gas is thereafter stopped without generating a plasma, and the TiCl.sub.4 gas is introduced by means of a carrier gas, to remove unnecessary Ti films sticking to the inside of the film forming apparatus.

REFERENCES:
patent: 5508066 (1996-04-01), Akahori
patent: 5514425 (1996-05-01), Ito et al.
patent: 5695831 (1997-12-01), Miyazaki
patent: 5709757 (1998-01-01), Hatano et al.
patent: 5721021 (1998-02-01), Tobe et al.

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