Superconducting thin film formed of oxide superconductor materia

Superconductor technology: apparatus – material – process – High temperature devices – systems – apparatus – com- ponents,... – Superconductor layer and one semiconducting or silicon layer

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505238, 505704, 505193, 505703, 257 34, 257 38, 257661, 257 39, 257662, H01L 3900, H01L 3924, H01B 1206

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054300134

ABSTRACT:
A superconducting thin film formed on a substrate, comprising an a-axis orientated oxide superconductor layer, a c-axis orientated oxide superconductor layer and an oxide semiconductor layer inserted between the a-axis orientated oxide superconductor layer and the c-axis orientated oxide superconductor layer, in contact with them in which superconducting current can flow between the a-axis orientated oxide superconductor layer and the c-axis orientated oxide superconductor layer through the oxide semiconductor layer by a long-range proximity effect.

REFERENCES:
patent: 5087605 (1992-02-01), Hedge et al.
patent: 5236896 (1993-08-01), Nakamura et al.
Tarutani et al., "Superconducting Characteristics of a Planar-Type HoBa.sub.2 Cu.sub.3 O.sub.7-x -La.sub.1.5 Ba.sub.1.5 Cu.sub.3 O.sub.7-y -HoBa.sub.2 Cu.sub.3 O.sub.7-x Junction", Appl. Phys. Lett. 58 (23), Jun. 10, 1991, pp. 2707-2709.
Kasai, M. et al, "Current-Voltage Characteristics of YBa.sub.2 Cu.sub.3 O.sub.y /La.sub.0.7 Ca.sub.0.3 MnO.sub.2 /YBa.sub.2 Cu.sub.3 O.sub.y Trilayered-Type Junctions", Japanese Journal of Applied Physics, vol. 29, No. 12: pp. L2219-2222, Dec., 1990.
Kozono, Y. et al, "Novel Proximity Effect Between High-Tc Superconductor and Magnetic Manganese Oxide", Physica, C, vol. 185, Pt. 3: pp. 1919-1920, 1 Dec. 1991.
Char, K. et al, "Bi-epitaxial Grain Boundary Junctions in YBa.sub.2 Cu.sub.3 O.sub.7 ", Applied Physics Letters, vol. 59, No. 6: pp. 733-735, 5 Aug. 1991.

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