Fishing – trapping – and vermin destroying
Patent
1993-11-08
1995-07-04
Picardat, Kevin M.
Fishing, trapping, and vermin destroying
437205, 437209, 437905, 437977, 257 13, H01L 21265
Patent
active
054299543
ABSTRACT:
A method for manufacture of radiation-emitting diodes includes manufacturing a layer sequence containing a radiation-generating pn-junction on a substrate wafer manufacturing contact layers for electrical connections on an upper face of the layer sequence and on an underside of the substrate wafer, etching trenches defining the size and shape of the area of individual pn-junctions of individual diodes being manufactured, providing a protective layer extending over the upper face contact layers and the etched trenches, subdividing the wafer having the layer sequence, the contact layers, and the protective layer thereon into individual diodes having lateral faces, after the subdividing, etching the lateral faces which are not provided with the protective layer to make the lateral faces into rough surfaces, and removing the protective layer following etching of the lateral faces.
REFERENCES:
patent: 3701696 (1972-10-01), Mets
patent: 3918150 (1975-11-01), Gantley
patent: 5040044 (1991-08-01), Noguchi et al.
patent: 5172195 (1992-12-01), Sekiwa
patent: 5250466 (1993-10-01), Gerner et al.
patent: 5284781 (1994-02-01), Satyanarayan et al.
patent: 5300788 (1994-04-01), Fan et al.
Shioya, Y.; Maeda, M.: Comparison of Phosphosilicate Glass Films Deposited by Three Different Chemical Vapor Deposition Methods. In: J. Electrochem. Soc.: Solid-State Science and Technology, Sep. 1986, vol. 133, pp. 1943-1950.
Freeouf, J. L. et al.: Accumulation capacitance for GaAs-SiO.sub.2 interfaces with Si interlayers. In: Appl. Phys. Lett. 57, 18, Oct. 29, 1990, pp. 1919-1921.
IEEE Transaction on Semiconductor Manufacturing, vol. 4, No. 1, Feb. 1991, pp. 66-68.
Picardat Kevin M.
TEMIC Telefunken microelectronic GmbH
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